KOHAMA Yoshitaka | NTT Applied Electronics Laboratories
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概要
関連著者
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KOHAMA Yoshitaka
NTT Applied Electronics Laboratories
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Ohmachi Yoshiro
Ntt Applied Electronics Laboratories
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Fukuda Yukio
Ntt Applied Electronics Laboratories
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OHMACHI Yoshiro
NTT Optoelectronics Laboratories
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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Fukuda Y
Ntt Optoelectronics Laboratories
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Fukuda Yukio
Tsukuba Research And Development Center Texas Instruments Japan Limited
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Ohmachi Y
Ntt Optoelectronics Laboratories
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KOHAMA Yoshitaka
NTT Opto-electronics Laboratories
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Fukuda Yuji
Kansai Photon Science Institute Japan Atomic Energy Agency
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Kohama Y
Ntt Opto-electronics Laboratories
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Fukuda Yuji
JAEA
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Seki M
Ntt Applied Electronics Laboratories:(present Address)ntt Technology Transfer Corporation
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Seki M
Ntt Advanced Technologies
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SEKI Masahiro
NTT Applied Electronics Laboratories
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Kadota Yoshiaki
Ntt Applied Electronics Laboratories
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Seki Masahiro
Ntt Advanced Technology
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SEKI Masahiro
NTT Advanced Technologies
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SEKI Masahiko
NTT Applied Electronics Laboratories
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WATANABE Yoshio
NTT Applied Electronics Laboratories
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Watanabe Yoshio
Ntt Advanced Technology Corporation
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Kohama Yoshitaka
NTT Applied Electronics Laboratories, 3-9-11, Midori-cho, Musashino-shi, Tokyo 180
著作論文
- Generation of Misfit Dislocations in Si_Ge_x/Si Heterostructures
- Dislocation Reduction in MBE-Grown Ge on Si (001) by in situ Thermal Annealing : Condensed Matter
- Misfit Dislocation Structures at MBE-Grown Si_Ge_x/Si Interfaces : Surfaces, Interfaces and Films
- Initial Stages of Epitaxial Growth of GaP on Si with AsH_3 Preflow
- Critical Thickness for the Si_Ge_x/Si Heterostructure
- Electron-Beam-Induced Current Observation of Misfit Dislocations at Si_Ge_x/Si Interfaces
- InP Grown on Si Substrates with GaP Buffer Layers by Metalorganic Chemical Vapor Deposition