Spontaneous Emission Enhancement in Pillar-Type Microcavities

スポンサーリンク

概要

• 論文の詳細を見る

• A reduction in photoluminescence decay time of pillar-type microcavities was observed with decreasing the detuning between the resonance wavelength of the cavities and the luminescence peak wavelength of the active layers. The radiative recombination time was extracted from the measured photoluminescence decay time by a diffusion equation analysis. The obtained spontaneous emission enhancement factor was between 1.6 and 1.8. This is the first observation of a spontaneous emission enhancement in three-dimensionally confined semiconductor microcavities.

• 社団法人応用物理学会の論文
• 1993-01-15

著者

• NUNOUE Shin-ya

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• Nunoue Shin-ya

  Toshiba Research And Development Center

• Tezuka Tsutomu

  Toshiba Research And Development Center

• Noda Takao

  Toshiba Research And Development Center

• YOSHIDA Haruhiko

  Toshiba Research and Development Center

関連論文

• Thermal Analysis for GaN Laser Diodes
• Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
• Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes
• Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
• Spontaneous Emission Enhancement in Pillar-Type Microcavities

スポンサーリンク