CdZnSe-ZnSe Multilayers by Metalorganic Vapour Phase Epitaxy Using Dimethylselenide
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Parbrook P
Toshiba Corp. Kawasaki Jpn
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Kamata A
Toshiba Corp. Kawasaki Jpn
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Uemoto T
Toshiba Corp. Kawasaki Jpn
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Uemoto Tsutomu
Research And Development Center Toshiba Corporation
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Uemoto Tsutomu
Materials And Devices Research Laboratories R&d Center Toshiba Corporation
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PARBROOK Peter
Research and Development Center, Toshiba Corporation
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KAMATA Atsushi
Research and Development Center, Toshiba Corporation
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Kamata Atsushi
Research And Development Center Toshiba Corporation
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Parbrook Peter
Research And Development Center Toshiba Corporation
関連論文
- Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
- Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
- Trap Centers in Germanium-Implanted and in As-Grown 6H-SiC
- CdZnSe-ZnSe Multilayers by Metalorganic Vapour Phase Epitaxy Using Dimethylselenide
- Reduction of Ohmic Contact Resistance on n-Type 6H-SiC by Heavy Doping