Reduction of Ohmic Contact Resistance on n-Type 6H-SiC by Heavy Doping

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概要

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• Ohmic contacts with low contact resistances were fabricated on n^+ 6H-SiC layers grown by liquid phase epitaxy. Ni was deposited on the layers for the contact metal Ohmic characteristics were obtained on as-deposited n^+ samples with carrier concentrations higher than about 5×10^<19> cm^<-3>. The contact resistance was lowered by thermal annealing at 1000℃ for 5 minutes. A specific contact resistance as low as 1×10^<-6> Ω・cm^2 was fabricated on an n^+ layer with a carrier concentration of 4.5×10^<20> cm^<-3>. It was found that Ti/Al, which is widely used as a p-type ohmic contact metal, also made a good ohmic contact on the n^+ layer.

• 社団法人応用物理学会の論文
• 1995-01-01

著者

• Uemoto Tsutomu

  Research And Development Center Toshiba Corporation

関連論文

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• Reduction of Ohmic Contact Resistance on n-Type 6H-SiC by Heavy Doping

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