Trap Centers in Germanium-Implanted and in As-Grown 6H-SiC
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-06-15
著者
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Uddin A
Materials And Devices Research Laboratories R&d Center Toshiba Corporation
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UDDIN Ashraf
Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation
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UEMOTO Tsutomu
Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation
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Uddin Ashraf
Materials And Device Research Laboratories R&d Center Toshiba Corporation
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Uemoto Tsutomu
Materials And Device Research Laboratories R&d Center Toshiba Corporation
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Uemoto Tsutomu
Materials And Devices Research Laboratories R&d Center Toshiba Corporation
関連論文
- Trap Centers in Germanium-Implanted and in As-Grown 6H-SiC
- CdZnSe-ZnSe Multilayers by Metalorganic Vapour Phase Epitaxy Using Dimethylselenide
- Observation of Deep Level in p-n Junction Diode of 6H:SiC
- Investigation of Deep Levels and Residual Impurities in Sublimation-Grown SiC Substrates