Observation of Deep Level in p-n Junction Diode of 6H:SiC

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概要

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• We have investigated the deep level trap centers in a p-n junction diode of 6H:SiC by deep level transient spectroscopy (DLTS) measurements. An electron trap center 0.71 eV below the conduction band edge is observed for the first time in 6H:SiC. The estimated trap center concentration and its capture cross section are found to be around 2×10^<15> cm^<-3> and 5×10^<-14> cm^2, respectively. The trap center concentration profile is found to be uniform. The origin of trap centers is suggested.

• 社団法人応用物理学会の論文
• 1993-11-15

著者

• UDDIN Ashraf

  Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation

• UEMOTO Tsutomu

  Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation

• Uddin Ashraf

  Materials And Device Research Laboratories R&d Center Toshiba Corporation

• Uemoto Tsutomu

  Materials And Device Research Laboratories R&d Center Toshiba Corporation

関連論文

• Trap Centers in Germanium-Implanted and in As-Grown 6H-SiC
• Observation of Deep Level in p-n Junction Diode of 6H:SiC
• Investigation of Deep Levels and Residual Impurities in Sublimation-Grown SiC Substrates

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