Hall Mobility of Positive Holes in Cu_2O
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概要
- 論文の詳細を見る
Hall mobility of photoexcited holes in the F; valence band of Cu.0 has beenmeasured at low temperatures. On the basis of the theory of carrier-lattice interac-tions in polyatomic crystals the intrinsic scattering mechanisms of this substance havebeen clarified, for the first time, in a wide temperature range up to 400 K. From 40 Kto 100 K scattering is dominated by the low-frequency LO phonon, co.. Above 100 K,the effect of the high-frequency LO phonon, co., becomes remarkable. Here,-1co.= 153 cm and co.=66O cm ' at 4.2 K. Mobility quenchirng due to the metastableself-trapping of holes possibly underlies the phenomena above 200 K. Below 40 K, thetemperature dependence of mobility can be explained in terms of a combination ofthe effects of optical, acoustical and neutral impurity scatterings. The magnitude ofthe deformation potential of the T; valence band is estimated to be as small as0.7S0.3 eV.
- 社団法人日本物理学会の論文
- 1989-05-15
著者
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SHIMADA Hiroshi
Department of Cardiology, Yokohama-Minami Kyosai Hospital
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MASUMI Taizo
Department of Pure and Applid Sciences,University of Tokyo
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Masumi T
National Inst. Materials Sci. Ibaraki
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Masumi Taizo
National Institute For Materials Science Nanomaterials Laboratory
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Masumi Taizo
Department Of Applied Physics University Of Tokyo
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Shimada Hiroshi
Department Of Biological Sciences Graduate School Of Bioscience And Biotechnology Tokyo Institute Of
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Masumi T
Univ. Tokyo Tokyo
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Shimada H
Department Of Physics Chuo University
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Shimada Hiroshi
Department Of Pure And Applied Science College Of Arts And Sciences University Of Tokyo
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Shimada Hiroshi
Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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