Optimization of Crystallization Characteristics for Phase-Change Optical Disk with Ag–Ge–Sb–Te Recording Film
スポンサーリンク
概要
- 論文の詳細を見る
A Ag–Ge–Sb–Te recording film was developed, and its chemical composition was optimized to minumize overwrite jitter. The cause of the jitter was investigated by measuring the crystallization ratios and by transmission electron microscopy. It was found that the overwrite jitter increased with a shortage of Ge or Ag because the crystallization speed increased when these elements were added, while it increased with an excess of Ge or Ag because the crystallization speed decreased when these elements were added. A model based on the atomic bond distance and the strength of interatomic interactions in the crystal was devised. The model can be used to explain the mechanism by which a slight change in the chemical composition of recording films changes the crystallization speed. It was confirmed that the proposed disk with recording film having a small amount of Ag had the minimum overwrite jitter (under 10%).
- 2007-10-15
著者
-
Terao Motoyasu
Central Resarch Laboratory Hitachi Ltd.
-
Hirotsune Akemi
Central Research Laboratory Hitachi Ltd.
-
Tamura Reiji
R&D division, Hitachi Maxell Ltd., 6139-1 Ohnogo, Mitsukaido, Ibaragi 300-2595, Japan
-
Miyauchi Yasushi
R&D Division, Development & Technology Group, Hitachi Maxell Ltd., 6139-1 Ohnogo, Joso, Ibaraki 300-2595, Japan
-
Miyamoto Makoto
R&D Division, Development & Technology Group, Hitachi Maxell Ltd., 6139-1 Ohnogo, Joso, Ibaraki 300-2595, Japan
-
Tokushuku Nobuhiro
Development Division, Hitachi-LG Data Storage, Inc., 4F MSC Center Bldg., 22-23 Kaigan 3-chome, Minato-ku, Tokyo 108-0022, Japan
-
Tamura Reiji
R&D Division, Development & Technology Group, Hitachi Maxell Ltd., 6139-1 Ohnogo, Joso, Ibaraki 300-2595, Japan
-
Miyamoto Makoto
R&D Division, Development & Technology Group, Hitachi Maxell Ltd., 6139-1 Ohnogo, Joso, Ibaraki 300-2595, Japan
関連論文
- GeSbTe Phase Change Material for Blue-Violet Laser at High Linear Speed
- Effect of Tl and Metallic Element Addition to In-Se Based Phase-change Optical Recording Film : MEDIA
- High Density Video Signal Recording in a New Amorphous Chalcogenide Thin Film : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- High-Density Recording on a Phase-Change Optical Disk with Suppression of Material Flow and Recording-Mark Shape-Deformation
- Analysis of Reproduced Waveform in Phase-Change Single-Beam Overwrite : PHASE CHANGE MEDIA I
- Nanometer-Sized Phase-Change Recording Using a Scanning Near-Field Optical Microscope with a Laser Diode
- Read/Write Technology for 50 GB/layer at 100 Mbps
- Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond
- Multilayer Disk Reduced Interlayer Crosstalk with Wide Disk-Fabrication Margin
- Interlayer Crosstalk Reduction by Controlling Backward Reflectivity in Multilayer Optical Discs
- Improvement of Overwrite Jitter of a Phase-Change Optical Disk with Al-Alloy Double-Reflective-Layer Structure
- Simulations of Marks Formed on Phase-change, Land/Groove Disks
- Analyses of Signals from Dual-Layer Phase Change Optical Disks
- A Review of Optical Disk Systems with Blue-Violet Laser Pickups
- A New Super-Resolution Film Applicable to Read-Only and Rewritable Optical Disks
- Novel 1-beam-overwriring Method for Phase-change Erasable Disk : DRIVE TECHNIQUE
- Read-Out Signal Simulation of an Optical Disk Having an Oxide Super-Resolution Film
- Optimization of Crystallization Characteristics for Phase-Change Optical Disk with Ag–Ge–Sb–Te Recording Film
- Feasibility of High-Data-Rate Media with Ge–Sb–Te Phase-Change Material
- Sn–Te–Se Films for Reversible Phase-Change Optical Recording
- Electrical Phase-Change Memory: Fundamentals and State of the Art
- Layer-Selection-Type Recordable Optical Disk with Inorganic Electrochromic Film