Equivalent Noise Temperature Representation for Scaled MOSFETs
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概要
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We proposed a novel representation of the thermal noise for scaled MOSFETs by applying an extended van der Ziels model. A comparison between the proposed representation and Pospieszalskis model is also performed. We confirmed that the representation of drain noise temperature, Td corresponds to the electron temperature in a gradual channel region.
- 2010-10-01
著者
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SHIMOMURA Hiroshi
Panasonic Corporation
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IWAI Hiroshi
Tokyo Institute of Technology
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Kakushima Kuniyuki
Tokyo Inst. Technol. Kanagawa Jpn
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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KAKUSHIMA Kuniyuki
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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