Kakushima Kuniyuki | Tokyo Inst. Technol. Kanagawa Jpn
スポンサーリンク
概要
関連著者
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Kakushima Kuniyuki
Tokyo Inst. Technol. Kanagawa Jpn
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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KAKUSHIMA Kuniyuki
Tokyo Institute of Technology
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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橋口 原
静岡大学
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SHIMOMURA Hiroshi
Panasonic Corporation
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IWAI Hiroshi
Tokyo Institute of Technology
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Kakushima Kuniyuki
Institude Of Industrial Science The University Of Tokyo Fujita Lab.
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FUJITA Hiroyuki
Institute of Industrial Science, The University of Tokyo
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橋口 原
Research Institute Of Electronics Shizuoka University
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Fujita Hiroyuki
Center For International Research On Micromechatronics (cirmm) Institute Of Industrial Science (iis)
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Pey Kin
Nanyang Technological University School Of Electrical And Electronic Engineering
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Ang Diing
Nanyang Technological University School Of Electrical And Electronic Engineering
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Ong Yi
Nanyang Technological University School Of Electrical And Electronic Engineering
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KAKUSHIMA Kuniyuki
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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橋口 原
香川大
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Hosogi Maho
Department Of I. M. S. E. Kagawa University
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Hosogi Maho
Department Of Intelligent Mechanical Systems Engineering Faculty Of Engineering Kagawa University
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ATAKA Manabu
Institute of Industrial Science, The University of Tokyo
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HASHIGUCHI Gen
Kagawa University
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HASHIGUCHI Gen
Research Institute of Electronics Shizuoka University
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HASHIGUCHI Gen
Department of Intelligent Mechanical Systems Engineering, Faculty of Engineering, Kagawa University
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HASHIGUCHI Gen
Faculty of Engineering, Kagawa University
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YONEZAWA Tetsu
Department of Chemistry, School of Science, The University of Tokyo
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HAGA Masa-aki
Department of Applied Chemistry, Faculty of Science and Engineering, Chuo University
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NOZAWA Naoyuki
Center for International Research on MicroMechatronics (CIRMM), Institute of Industrial Science (IIS
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FUJITA Hiroyuki
Center for International Research on MicroMechatronics (CIRMM), Institute of Industrial Science (IIS
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WATANABE Toshiyuki
Ritsumeikan University
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SHIMAMOTO Kouji
Ritsumeikan University
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GOUDA Takushi
Kagawa University
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MIMURA Hidenori
Shizuoka University
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ISONO Yoshimasa
Ritsumeikan University
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MIHARA Yutaka
Kagawa University
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Haga Masa-aki
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
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Nozawa Naoyuki
Center For International Research On Micromechatronics (cirmm) Institute Of Industrial Science (iis)
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Hashiguchi Gen
Department Of Intelligent Mechanical Systems Engineering Faculty Of Engineering Kagawa University
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Hashiguchi Gen
Faculty Of Engineering Kagawa University
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Yonezawa Tetsu
Department Of Applied Chemistry Graduate School Of Engineering Nagoya University
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Fujita Hiroyuki
Center For International Research On Micromechatronics (cirmm) Institute Of Industrial Science (iis)
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Fujita Hiroyuki
Institude Of Industrial Science The University Of Tokyo Fujita Lab.
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Tsutsui Kazuo
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science & Engineering
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ONG Yi
Nanyang Technological University, School of Electrical and Electronic Engineering
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ANG Diing
Nanyang Technological University, School of Electrical and Electronic Engineering
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O'shea Sean
Institute Of Materials Research And Engineering 3 Research Link
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Kakushima Kuniyuki
Tokyo Institute Of Technology Frontier Research Center
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Iwai Hiroshi
Tokyo Institute Of Technology Frontier Research Center
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Hattori Takeo
Tokyo Institute of Technology, Frontier Collaborative Research Center, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ahmet Parhat
Tokyo Institute of Technology
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Ahmet Parhat
Tokyo Institute of Technology, Frontier Collaborative Research Center, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Kakushima Kuniyuki
Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Molina Joel
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
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Torres Alfonso
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
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Calleja Wilfrido
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
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Sugii Nobuyuki
Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Molina Joel
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
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Torres Alfonso
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
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Calleja Wilfrido
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
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Fujita Hiroyuki
Center for International Research on Micro Mecharonics, Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Fujita Hiroyuki
Center for International Research on Micro Mechanics, Institute of Industrial Science, The University of Tokyo
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O'SHEA Sean
Institute of Materials Research and Engineering 3
著作論文
- In situ Visualization of Degradation of Silicon Field Emitter Tips
- Electrical Conductivity of Lambda DNA-Pd Wire
- Atomic Force Microscope Cantilever Array for Parallel Lithography of Quantum Devices
- Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50nm Node MOSFETs
- Equivalent Noise Temperature Representation for Scaled MOSFETs
- Study of Trap Generation in the Sc_2O_3/La_2O_3/SiO_x Gate Dielectric Stack by Scanning Tunneling Microscopy
- Degradation and Breakdown of W–La2O3 Stack after Annealing in N2
- Study of Trap Generation in the Sc2O3/La2O3/SiOx Gate Dielectric Stack by Scanning Tunneling Microscopy