Study of Trap Generation in the Sc_2O_3/La_2O_3/SiO_x Gate Dielectric Stack by Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
- 2011-08-20
著者
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Kakushima Kuniyuki
Tokyo Inst. Technol. Kanagawa Jpn
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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Pey Kin
Nanyang Technological University School Of Electrical And Electronic Engineering
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ONG Yi
Nanyang Technological University, School of Electrical and Electronic Engineering
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ANG Diing
Nanyang Technological University, School of Electrical and Electronic Engineering
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Ang Diing
Nanyang Technological University School Of Electrical And Electronic Engineering
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Ong Yi
Nanyang Technological University School Of Electrical And Electronic Engineering
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O'shea Sean
Institute Of Materials Research And Engineering 3 Research Link
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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Iwai Hiroshi
Tokyo Institute Of Technology Frontier Research Center
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- Space-Charge-Limited Currents in La_2O_3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing
- Effect of Post-Metallization Annealing on Electrical Characteristics of La_2O_3 Gate Thin Films
- Precise Extraction of Metal Gate Work Function from Bevel Structures
- Equivalent Noise Temperature Representation for Scaled MOSFETs
- Study of Trap Generation in the Sc_2O_3/La_2O_3/SiO_x Gate Dielectric Stack by Scanning Tunneling Microscopy
- Degradation and Breakdown of W–La2O3 Stack after Annealing in N2
- Study of Trap Generation in the Sc2O3/La2O3/SiOx Gate Dielectric Stack by Scanning Tunneling Microscopy