Degradation and Breakdown of W–La2O3 Stack after Annealing in N2
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概要
- 論文の詳細を見る
We report the effect of relatively high-voltage stressing (under substrate injection) on the stress-induced leakage current (SILC) and breakdown of W–La2O3 stacked structures. It is shown that the gate area of the metal–insulator–semiconductor (MIS) devices under evaluation influences their final degradation characteristics after stress. Once the samples reach breakdown, their post-breakdown current–voltage ($I$–$V$) characteristics suggest that leakage spots are highly localized and are caused by the accumulation of defects.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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Kakushima Kuniyuki
Tokyo Inst. Technol. Kanagawa Jpn
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Tsutsui Kazuo
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science & Engineering
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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Hattori Takeo
Tokyo Institute of Technology, Frontier Collaborative Research Center, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ahmet Parhat
Tokyo Institute of Technology
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Ahmet Parhat
Tokyo Institute of Technology, Frontier Collaborative Research Center, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Kakushima Kuniyuki
Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Molina Joel
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
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Torres Alfonso
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
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Calleja Wilfrido
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
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Sugii Nobuyuki
Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Molina Joel
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
-
Torres Alfonso
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
-
Calleja Wilfrido
Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronics Department, Microelectronics Group, Luis Enrique Erro #1 Apdo. Postal 51 y 216, Tonantzintla, Puebla 72000, Mexico
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