Straight and Smooth Etching of GaN $(1\bar{1}00)$ Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques

概要

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GaN striped structures along the $ \langle 11 \bar{2}0 \rangle $ and $ \langle 1 \bar{1}00 \rangle $ directions were fabricated by a combination etching technique, consisting of reactive ion etching followed by KOH wet etching. After wet etching, the sidewalls of the striped structures along the $ \langle 11 \bar{2}0 \rangle $ direction became very smooth and straight, compared with normal wet etching and dry etching. From the differences of the etching along the $ \langle 1 \bar{1}00 \rangle $ direction, it was found that etching mainly occurs in the $(1 \bar{1}00)$ plane. This phenomenon can be explained by the action of OH- ions, which are repelled by N dangling bonds on the surface and which attack Ga back bonds as well as the mechanism of $(000 \bar{1})$ polar GaN etching.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-05-15