Strain Distribution around SiO2/Si Interface in Si Nanowires: A Molecular Dynamics Study

スポンサーリンク

概要

• 論文の詳細を見る

• We have performed three-dimensional molecular dynamics simulations to investigate strain and stress distributions in silicon nanostructures covered with thermal oxide films, by using our original molecular force field for Si, O mixed systems. We have modeled a wire-shaped nanostructure by carving a Si(001) substrate, and then an oxide film with a uniform thickness was formed by inserting oxygen atom into Si–Si bonds from the surface. The simulation results show that a compressive stress is concentrated on the oxide region in the vicinity of the side SiO2/Si interface of the nanowire. At the top interface, there is also a compressive stress in the [110] direction, whereas the [001] component of the normal stress tensor is almost relaxed. These results suggest that the oxidation is strongly suppressed at the side faces of the silicon nanowire.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-05-30

著者

• OHTA Hiromichi

  Faculty of Engineering, Ibaragi University

• Ohdomari Iwao

  Institute for Nanoscience and Nanotechnology, Waseda University, Tokyo 169-8555, Japan

• Watanabe Takanobu

  Institute for Nanoscience and Nanotechnology, Waseda University, Tokyo 169-8555, Japan

• Ohta Hiromichi

  Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan

• Watanabe Takanobu

  Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 169-8555, Japan

関連論文

• High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process
• Applicability of Platinum and Molybdenum Coatings for Measuring Thermal Diffusivity of Transparent Glass Specimens by the Laser Flash Method at High Temperatures
• Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
• Strain Distribution around SiO2/Si Interface in Si Nanowires: A Molecular Dynamics Study
• Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability (Special Issue : Solid State Devices and Materials)
• Measurement and Modeling of Thermal Conductivity for Dense Iron Oxide and Porous Iron Ore Aggliomerates in Stepwise Reduction.

スポンサーリンク