Numerical analysis of impurities transport in a unidirectional solidification furnace

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概要

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• For accurate prediction of carbon and oxygen impurities in multicrystalline silicon material for solar cells, global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was implemented. Both the gas flow and silicon melt flow were considered. Five chemical reactions were included during the transportation of impurities. The simulation results show good agreement with experimental data. The effect of flow rate on impurities was examined. An increase in flow rate can reduce both carbon and oxygen impurities in the crystal, though the reduction of carbon is more obvious.

• Research Institute for Applied Mechanics, Kyushu Universityの論文
• 2009-09-00

著者

• Nakano Satoshi

  Research Institute for Applied Mechanics, Kyushu University

• Kakimoto Koichi

  Research Institute For Applied Mechanics Kyushu University

• Gao Bing

  九州大学応用力学研究所

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