Numerical investigation of thermal stress and dislocation density in silicon ingot during a solidification process

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A transient global model was used to obtain the solution of a thermal field within the entire furnace during a unidirectional solidification process for photovoltaics. The melt-solid interface shape was obtained by a dynamic interface tracking method. The thermal stress distribution in the silicon ingot was solved using the displacement-based thermo-elastic stress model. Furthermore, the relaxation of stress and multiplication of dislocations were performed by using Haasen-Alexander-Sumino model (HAS model), The results revealed that levels of both residual stress and dislocation density are higher in the peripheral, bottom region than that in the internal region. The simulation results also suggested that the crucible constraint should be reduced for growing a silicon ingot with low thermal stress and low dislocation density.52