Kawamura Takahiro | Graduate School of Engineering, Mie University, Tsu 514-8507, Japan

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• Kawamura Takahiroの詳細を見る
• 同名の論文著者
• Graduate School of Engineering, Mie University, Tsu 514-8507, Japanの論文著者

関連著者

• Kawamura Takahiro

  Graduate School of Engineering, Mie University, Tsu 514-8507, Japan

• Maruyama Mihoko

  Graduate School Of Engineering Osaka University

• Mori Yusuke

  Graduate School Of Bionics Tokyo University Of Technology

• Imade Mamoru

  Graduate School Of Electrical Engineering Osaka University

• YOSHIMURA Masashi

  Graduate school of Electrical Engineering, Osaka University

• Imabayashi Hiroki

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Morikawa Yoshitada

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Imade Mamoru

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Kakimoto Koichi

  Research Instittue For Applied Mechanics Kyushu University

• SUZUKI Yasuyuki

  Graduate School of Science and Engineering, Shizuoka University

• Kotake Shigeo

  Graduate School of Engineering, Mie University, Tsu 514-8507, Japan

• Kangawa Yoshihiro

  Research Institute of Applied Physics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Kangawa Yoshihiro

  Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Suzuki Yasuyuki

  Graduate School of Engineering, Mie University, Tsu 514-8507, Japan

• Kakimoto Koichi

  Research Institute of Applied Physics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Yamada Yuji

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• YAMADA Yuji

  Graduate School of Education, Hokkaido University

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著作論文

• Investigation of GaN Solution Growth Processes on Ga- and N-Faces by Molecular Dynamics Simulation
• Structural Analysis of Carbon-Added Na--Ga Melts in Na Flux GaN Growth by First-Principles Calculation
• Structural Analysis of Carbon-Added Na-Ga Melts in Na Flux GaN Growth by First-Principles Calculation (Special Issue : Recent Advances in Nitride Semiconductors)

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