Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
- 2011-08-20
著者
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Bolotov Leonid
Mirai-advanced Semiconductor Research Center (asrc)
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Kanayama Toshihiko
Mirai-advanced Semiconductor Research Center (asrc)
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Kanayama Toshihiko
Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo
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Nishizawa Masayasu
Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Science And
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Bolotov Leonid
Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo
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NISHIZAWA Masayasu
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technol
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Nishizawa Masayasu
Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo
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Bolotov Leonid
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology
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Nishizawa Masayasu
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology
関連論文
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Measurements of Electrostatic Potential Across p--n Junctions on Oxidized Si Surfaces by Scanning Multimode Tunneling Spectroscopy
- Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
- Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)-2×1 Surfaces
- Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters
- Two dimensional dopant profiling by scanning tunneling microscopy (小特集 半導体産業で利用される走査プローブ顕微鏡技術)
- Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water