Two dimensional dopant profiling by scanning tunneling microscopy (小特集 半導体産業で利用される走査プローブ顕微鏡技術)
スポンサーリンク
概要
著者
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Bolotov Leonid
Mirai-advanced Semiconductor Research Center (asrc)
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Kanayama Toshihiko
Mirai-advanced Semiconductor Research Center (asrc)
関連論文
- Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
- Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)-2×1 Surfaces
- Two dimensional dopant profiling by scanning tunneling microscopy (小特集 半導体産業で利用される走査プローブ顕微鏡技術)
- Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy