Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Bolotov Leonid
Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scien
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Bolotov Leonid
Mirai-advanced Semiconductor Research Center (asrc)
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NISHIZAWA Masayasu
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industr
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Kanayama Toshihiko
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Kanayama Toshihiko
Mirai-advanced Semiconductor Research Center (asrc)
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Nishizawa Masayasu
Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Science And
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Nishizawa Masayasu
Mirai Project Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industria
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Bolotov Leonid
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology
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Nishizawa Masayasu
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology
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