Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)-2×1 Surfaces
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-12-10
著者
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Bolotov Leonid
Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scien
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Bolotov Leonid
Mirai-advanced Semiconductor Research Center (asrc)
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NISHIZAWA Masayasu
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industr
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Kanayama Toshihiko
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Kanayama Toshihiko
Mirai-advanced Semiconductor Research Center (asrc)
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Nishizawa Masayasu
Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Science And
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Nishizawa Masayasu
Mirai Project Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industria
関連論文
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- Modulation of CoSi2/Si Schottky Barrier Height by Charge Transfer Doping Utilizing Cesium Segregation at the SiO2/Si Interface
- Impact of Aggressively Shallow Source/Drain Extensions on Device Performance
- Impact of Aggressively Shallow Source/Drain Extensions on the Device Performance
- Subwavelength-Resolution Raman Microscopy of Si Structures Using Metal-Particle-Topped AFM Probe
- Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
- Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)-2×1 Surfaces
- Observation of Hydrogenated Silicon Clusters Si_6H_x with Controlled Hydrogen Content on Si (111)-(7×7) Surfaces
- Two dimensional dopant profiling by scanning tunneling microscopy (小特集 半導体産業で利用される走査プローブ顕微鏡技術)
- Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy
- Subwavelength-Resolution Raman Microscopy of Si Structures Using Metal-Particle-Topped AFM Probe
- Observation of Hydrogenated Silicon Clusters Si6Hx with Controlled Hydrogen Content on Si (111)-($7\times 7$) Surfaces
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water