Observation of Hydrogenated Silicon Clusters Si_6H_x with Controlled Hydrogen Content on Si (111)-(7×7) Surfaces
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-15
著者
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Bolotov Leonid
Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scien
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Uchida Noriyuki
Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scien
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Kanayama Toshihiko
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Kanayama Toshihiko
Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scien
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- Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
- Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)-2×1 Surfaces
- Observation of Hydrogenated Silicon Clusters Si_6H_x with Controlled Hydrogen Content on Si (111)-(7×7) Surfaces
- Subwavelength-Resolution Raman Microscopy of Si Structures Using Metal-Particle-Topped AFM Probe
- Observation of Hydrogenated Silicon Clusters Si6Hx with Controlled Hydrogen Content on Si (111)-($7\times 7$) Surfaces