Subwavelength-Resolution Raman Microscopy of Si Structures Using Metal-Particle-Topped AFM Probe

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概要

• 論文の詳細を見る

• Using depolarization of the 364 nm light scattered by a small particle on the (100)Si surface, one can obtain allowed 520 cm-1 Raman signal from the localized area of Si around the particle, while the ordinary Raman signal is forbidden by the polarization selection rules. We have realized this scheme using Ag-particle-topped quartz atomic force microscope (AFM) probe immersed into glycerol droplet on Si surface and applied to local stress measurement. Lateral resolution in the range of 100 nm was demonstrated, and stress variation in a strained Si film was investigated.

• Japan Society of Applied Physicsの論文
• 2005-01-10

著者

• Tada Tetsuya

  Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc

• Kanayama Toshihiko

  Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc

• POBORCHII Vladimir

  MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and

• Kanayama Toshihiko

  MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 4, Higashi, Tsukuba 305-8562, Japan

• Tada Tetsuya

  MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 4, Higashi, Tsukuba 305-8562, Japan

• Poborchii Vladimir

  MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 4, Higashi, Tsukuba 305-8562, Japan

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