Impact of Aggressively Shallow Source/Drain Extensions on the Device Performance
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Tada Tetsuya
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Kanayama Toshihiko
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Kimoto Kenji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba Central 4, 1-1-1
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Kimoto Kenji
Mirai-aset Aist
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Kimoto Kenji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
関連論文
- Modulation of CoSi2/Si Schottky Barrier Height by Charge Transfer Doping Utilizing Cesium Segregation at the SiO2/Si Interface
- Impact of Aggressively Shallow Source/Drain Extensions on Device Performance
- Impact of Aggressively Shallow Source/Drain Extensions on the Device Performance
- Subwavelength-Resolution Raman Microscopy of Si Structures Using Metal-Particle-Topped AFM Probe
- Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
- Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)-2×1 Surfaces
- Observation of Hydrogenated Silicon Clusters Si_6H_x with Controlled Hydrogen Content on Si (111)-(7×7) Surfaces
- Subwavelength-Resolution Raman Microscopy of Si Structures Using Metal-Particle-Topped AFM Probe
- Observation of Hydrogenated Silicon Clusters Si6Hx with Controlled Hydrogen Content on Si (111)-($7\times 7$) Surfaces