Observation of Hydrogenated Silicon Clusters Si6Hx with Controlled Hydrogen Content on Si (111)-($7\times 7$) Surfaces

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概要

• 論文の詳細を見る

• We studied how Si6Hx clusters behave on Si (111)-($7\times 7$) surfaces depending on hydrogen content $x$ by scanning tunneling microscopy. The Si6H$_{x}^{+}$ ions were synthesized in an ion trap and deposited onto the ($7\times 7$) surfaces with an impact kinetic energy of 3 eV, i.e., 0.5 eV/Si atom, without decomposition. Deposited Si6H10–13 clusters favorably adsorbed on faulted halves of the ($7\times 7$) surfaces while Si6H0–5 clusters were randomly distributed. A clear difference of the electronic structure between Si6H0–5 and Si6H10–13 clusters was found in the tunneling spectra of the clusters.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-02-15

著者

• Bolotov Leonid

  Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scien

• Uchida Noriyuki

  Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scien

• Kanayama Toshihiko

  Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc

• Uchida Noriyuki

  MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan

• Bolotov Leonid

  MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan

• Kanayama Toshihiko

  MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan

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• Observation of Hydrogenated Silicon Clusters Si6Hx with Controlled Hydrogen Content on Si (111)-($7\times 7$) Surfaces

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