Modulation of CoSi2/Si Schottky Barrier Height by Charge Transfer Doping Utilizing Cesium Segregation at the SiO2/Si Interface
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概要
- 論文の詳細を見る
We demonstrate that the Schottky barrier height (SBH) of CoSi2/$n$-Si diodes is efficiently modulated by charge transfer doping from the implanted Cs ions segregated at the SiO2/Si interface. The current–voltage characteristics and their temperature dependence revealed that the SBH reduced from the initial 0.52 to 0.06 eV with a Cs dose of $5\times 10^{13}$ cm-2 and to the ohmic feature for a dose exceeding $5\times 10^{14}$ cm-2. This SBH reduction is attributed to barrier thinning and image-force barrier lowering resulting from band bending due to the positive Cs ions segregated at the SiO2/Si interface above the CoSi2 contact.
- Japan Society of Applied Physicsの論文
- 2007-02-25
著者
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Tada Tetsuya
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Kanayama Toshihiko
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Kimoto Kenji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba Central 4, 1-1-1
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Kimoto Kenji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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