Bolotov Leonid | Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scien
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概要
- Bolotov Leonidの詳細を見る
- 同名の論文著者
- Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scienの論文著者
関連著者
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Bolotov Leonid
Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scien
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Kanayama Toshihiko
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Bolotov Leonid
Mirai-advanced Semiconductor Research Center (asrc)
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NISHIZAWA Masayasu
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industr
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Uchida Noriyuki
Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scien
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Kanayama Toshihiko
Mirai-advanced Semiconductor Research Center (asrc)
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Nishizawa Masayasu
Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Science And
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Nishizawa Masayasu
Mirai Project Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industria
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Kanayama Toshihiko
Mirai Project Advanced Semiconductor Research Center National Institute Of Advanced Industrial Scien
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Bolotov Leonid
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology
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Nishizawa Masayasu
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology
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Uchida Noriyuki
MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Bolotov Leonid
MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Kanayama Toshihiko
MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
著作論文
- Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
- Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)-2×1 Surfaces
- Observation of Hydrogenated Silicon Clusters Si_6H_x with Controlled Hydrogen Content on Si (111)-(7×7) Surfaces
- Observation of Hydrogenated Silicon Clusters Si6Hx with Controlled Hydrogen Content on Si (111)-($7\times 7$) Surfaces