Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-15
著者
-
Ikari Atsushi
Advanced Technology Research Laboratories Nippon Steel Corporation
-
Inoue Yoshiharu
Advanced Technology Research Laboratories Nippon Steel Corporation
-
TAKAHASHI Jun
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
NAKAI Katsuhiko
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
KAWAKAMI Kazuto
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
YOKOTA Hideki
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
TACHIKAWA Akiyoshi
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
OHASHI Wataru
Advanced Technology Research Laboratories, Nippon Steel Corporation
関連論文
- Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals
- Electron Spin Resonance Studies on Spots with Brown Rims on a Vitreous Silica Surface formed by a Silicon Melt
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Thermal Resistance and Electrornic Characteristics for High Electron Mobility Transistors Grown on Si and GaAs Substrates by Metal-Organic Chemical Vapor Deposition
- Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
- Transmission Electron Microscope Observation of Grown-in Defects Detected by Bright-Field Infrared-Laser Interferometer in Czochralski Silicon Crystals
- Positive Magnetoresistances of Carbon Fibers
- Mechanism of Molten KOH Etching of SiC Single Crystals : Comparative Study with Thermal Oxidation
- Influence of the Seed Face Polarity on the Sublimation Growth of α-SiC
- Interaction between Substitutional and Interstitial Elements in α iron Studied by First-principles Calculation
- Improvement of Threshold Voltage Uniformity in Ion-Implanted GaAs-Metal-Semiconductor Field-Effect Transistors on Si
- Influence of Crystal Originated Particles on Gate Oxide Breakdown
- Measurement of Carrier Concentration at the GaAs-Si Interface in GaAs on Si by Raman Scattering
- Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs-Si Interface
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals