Multiple SOI Structure Fabricated by High Dose Oxygen Implantation and Epitaxial Growth
スポンサーリンク
概要
- 論文の詳細を見る
A triple SOI (Silicon crystal On Insulator) structure has been fabricated on (100) and (111) Si substrates, utilizing three SIMOX (Separation by IMplanted 0Xygen) cycles. The SIMOX process consists of high-dose oxygen implantation followed by annealing and epitaxial growth of silicon, and provides good surface morphology. The top Si layer of the present triple SOI is single crystalline, which is confirmed by reflection electron diffraction and Rutherford backscattering measurement.
- 社団法人応用物理学会の論文
- 1981-12-05
著者
-
KUNII Yasuo
Electrical Communication Laboratories, Nippon Telegraph and Telephone Corporation
-
KAJIYAMA Kenji
Electrical Communication Laboratories
-
Kunii Yasuo
Electrical Communication Laboratories
-
Kunii Yasuo
Electrical Communication Laboratories Ntt
-
IRITA Yukio
Electrical Communication Laboratories, NTT
-
TAKAHASHI Mitsutoshi
Electrical Communication Laboratories, NTT
-
Takahashi Mitsutoshi
Electrical Communication Laboratories Ntt
-
Irita Yukio
Electrical Communication Laboratories Ntt
関連論文
- High-Resolution Electron Microscope Study of Silicon on Insulator Structure Grown by Lateral Solid Phase Epitaxy
- Lateral-Epitaxy of CVD a-Si over SiO_2 Stripe-Area by Furnace-Annealing : LATE NEWS
- Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si
- Current-Path Observation in Low-Dose SIMOX (Separation by Implanted Oxygen) Buried-SiO_2 Layer
- Dislocation Density Reduction in SIMOX (Separation by Implanted Oxygen) Multi-Energy Single Implantation
- Gas Mixing Effect on Ion Current Spectrum and Its Application to Optimize Implantation Source Gas Composition
- Multiple SOI Structure Fabricated by High Dose Oxygen Implantation and Epitaxial Growth
- Zinc Diffusion in In_xGa_As
- Effect of Electron-and Photon Lifetime Ratio on Relaxation Oscillation in Laser Diodes
- Comment on the Equilibrium Composition Relation in "Vapor Growth of InAs_xP_"
- The In-Ga-P Ternary Phase Diagram