Lateral-Epitaxy of CVD a-Si over SiO_2 Stripe-Area by Furnace-Annealing : LATE NEWS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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Tabe Michiharu
Electrical Communication Laboratories
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KUNII Yasuo
Electrical Communication Laboratories, Nippon Telegraph and Telephone Corporation
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KAJIYAMA Kenji
Electrical Communication Laboratories
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Kunii Yasuo
Electrical Communication Laboratories
関連論文
- High-Resolution Electron Microscope Study of Silicon on Insulator Structure Grown by Lateral Solid Phase Epitaxy
- Lateral-Epitaxy of CVD a-Si over SiO_2 Stripe-Area by Furnace-Annealing : LATE NEWS
- Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si
- Current-Path Observation in Low-Dose SIMOX (Separation by Implanted Oxygen) Buried-SiO_2 Layer
- Dislocation Density Reduction in SIMOX (Separation by Implanted Oxygen) Multi-Energy Single Implantation
- Gas Mixing Effect on Ion Current Spectrum and Its Application to Optimize Implantation Source Gas Composition
- Multiple SOI Structure Fabricated by High Dose Oxygen Implantation and Epitaxial Growth
- Zinc Diffusion in In_xGa_As
- Effect of Electron-and Photon Lifetime Ratio on Relaxation Oscillation in Laser Diodes
- Comment on the Equilibrium Composition Relation in "Vapor Growth of InAs_xP_"
- The In-Ga-P Ternary Phase Diagram