Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors (Special Issue on Quarter Micron Si Device and Process Technologies)

概要

論文の詳細を見る
The dielectric breakdown strength of thermally grown silicon dioxide films was studied for MOS capacitors fabricated on silicon wafers that were intentionally contaminated with magnesium and zinc. Most of magnesium was detected in the oxide film after oxidation. Zinc, some of which evaporated from the surface of wafers, was detected only in the oxide film. The mechanism of the dielectric degradation is dominated by formation of metal silicates, such as Mg_2SiO_4 (Forsterite) and Zn_2SiO_4 (Wilemite). The formation of metal silicates has no influence on the generation lifetime of minority carriers, however, it provides the flat-band voltage shift less than 0.3 eV, and forces to increase the density of deep surface states with the zinc contamination.
社団法人電子情報通信学会の論文
1994-03-25