Role of Point Defects in Dielectric Breakdown of SiO_2 Formed by Plasma-Enhanced Chemical Vapor Deposition of Tetraethoxysilane
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-01-15
著者
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NISHIKAWA Hiroyuki
Department of Chemistry, Graduate School of Science, Tokyo Metropolitan University
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ISHII Keisuke
Department of Materials Science and Engineering, The National Defense Academy
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Ishii Keisuke
Department Of Materials Science And Engineering The-national Defense Academy
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OHKI Yoshimichi
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Nishikawa Hiroyuki
Department Of Breast And Endocrine Surgery St. Marianna University School Of Medicine
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Takiyama Makoto
ULSI Development Center, Semiconductor Division, Nippon Steel Corp.
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Takiyama Makoto
Ulsi Development Center Semiconductor Division Nippon Steel Corp.
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ISSHIKI Daisuke
Department of Electrical Engineering, Waseda University
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Isshiki Daisuke
Department Of Electrical Engineering Waseda University
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Takiyama Makoto
Ulsi Development Center Semiconductor Division Nippon Steel Corporation
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Ohki Yoshimichi
Department Of Electrical Electronic And Computer Engineering Waseda University
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Ishii Keisuke
Department Of Electrical Engineering Waseda University
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Ishii Keisuke
Department of Chemistry, College of Science and Engineering, Aoyama Gakuin University
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Nishikawa Hiroyuki
Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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