Takiyama Makoto | ULSI Development Center, Semiconductor Division, Nippon Steel Corp.

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概要

• 同名の論文著者
• ULSI Development Center, Semiconductor Division, Nippon Steel Corp.の論文著者

関連著者

• Takiyama Makoto

  ULSI Development Center, Semiconductor Division, Nippon Steel Corp.

• Takiyama Makoto

  Ulsi Development Center Semiconductor Division Nippon Steel Corp.

• NISHIKAWA Hiroyuki

  Department of Chemistry, Graduate School of Science, Tokyo Metropolitan University

• ISHII Keisuke

  Department of Materials Science and Engineering, The National Defense Academy

• Ishii Keisuke

  Department Of Materials Science And Engineering The-national Defense Academy

• OHKI Yoshimichi

  Department of Electrical Engineering, School of Science and Engineering, Waseda University

• Tachimori Masaharu

  Advanced Technology Research Laboratories, Nippon Steel Corporation

• Nishikawa Hiroyuki

  Department Of Breast And Endocrine Surgery St. Marianna University School Of Medicine

• Sakon Tadashi

  Semiconductor Materials Lab. Electronics Research Laboratories Nippon Steel Corp.

• Ohtsuka S

  Ntt Data Corp. Tokyo Jpn

• Ohtsuka Susumu

  Semiconductor Materials Lab., Electronics Research Laboratories, Nippon Steel Corp.

• Takiyama M

  Nsc Electron Corp. Yamaguchi Jpn

• ISSHIKI Daisuke

  Department of Electrical Engineering, Waseda University

• Isshiki Daisuke

  Department Of Electrical Engineering Waseda University

• Tachimori Masaharu

  Advanced Semiconductor Technology Lab. Electronics Laboratories Nippon Steel Corp.

• Takiyama Makoto

  Ulsi Development Center Semiconductor Division Nippon Steel Corporation

• Ohki Yoshimichi

  Department Of Electrical Electronic And Computer Engineering Waseda University

• Ohtsuka Susumu

  Semiconductor Materials Lab. Electronics Research Laboratories Nippon Steel Corp.

• Ishii Keisuke

  Department Of Electrical Engineering Waseda University

• Ishii Keisuke

  Department of Chemistry, College of Science and Engineering, Aoyama Gakuin University

• Nishikawa Hiroyuki

  Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan

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著作論文

• Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors (Special Issue on Quarter Micron Si Device and Process Technologies)
• Role of Point Defects in Dielectric Breakdown of SiO_2 Formed by Plasma-Enhanced Chemical Vapor Deposition of Tetraethoxysilane

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