Effect of Oxygen Content on Defect Formation in Pure-Silica Core Fibers
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概要
- 論文の詳細を見る
There is slight lack of stoichiometry in pure silica glass, which varies according to the synthesis process. The lack of stoichiometry leads to defect formations: the 245 nm absorption band and drawing-induced E' centers are formed in oxygen-deficient silica, but peroxy radicals and drawing-induced 2 eV band are formed in oxygen-rich silica. The 245 nm band seems to be caused by the 〓Si-Si〓 bonding.
- 社団法人応用物理学会の論文
- 1987-05-20
著者
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Nagasawa K
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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OHKI Yoshimichi
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Hoshi Y
Institute Of Industrial Science The University Of Tokyo
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Nagasawa Kaya
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Nagasawa Kaya
Department Of Electrical Engineering Sagami Institute Of Technology
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HOSHI Yutaka
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Ohki Yoshimichi
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Ohki Yoshimichi
Department Of Electrical Electronic And Computer Engineering Waseda University
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