Nagasawa K | Semiconductor And Integrated Circuits Division Hitachi Ltd.
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概要
関連著者
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Nagasawa K
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Nagasawa Kaya
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Nagasawa Kaya
Department Of Electrical Engineering Sagami Institute Of Technology
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OHKI Yoshimichi
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Ohki Yoshimichi
Department Of Electrical Electronic And Computer Engineering Waseda University
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YAHAGI Kichinosuke
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Yahagi K
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Yahagi Kichinosuke
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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HAMA Yoshimasa
Waseda Univ. Sci. Engin. Res. Center
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Hoshi Y
Institute Of Industrial Science The University Of Tokyo
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Hama Yoshimasa
Sci. Engin. Res. Center Waseda Univ.
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HOSHI Yutaka
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Ohki Yoshimichi
Department Of Electrical Engineering Waseda University
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Ohki Yoshimichi
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Fujii Takashi
Department Of Cardiology Hiroshima General Hospital
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TANABE Masafumi
ULVAC Japan Co., Ltd.
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Fujii Toshio
Fujitsu Laboratories Lid.
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Tanabe M
Ulvac Japan Ltd. Kanagawa Jpn
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Tanabe Manabu
Department Of Infectious Diseases & Applied Immunology Institute Of Medical Science University O
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HAMA Yoshimasa
Science and Engineering Research Laboratory, Waseda University
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Fujii Takashi
Department Of Applied Physics And Chemistry The University Of Electro-communications
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Shimizu H
Nihon Kesso Koogaku Co. Ltd. Gunma Jpn
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Fujita Masato
Kofu Operation Of Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Nagasawa Koichi
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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SHIMIZU Hirofumi
Semiconductor Design & Development Center, Hitachi, Ltd.
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Shimizu H
National Inst. Materials And Chemical Res. Ibaraki Jpn
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TAKEDA Kazuo
Central Research Lab., Hitachi, Lid.
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ISOMAE Seiichi
Central Research Lab., Hitachi, Lid.
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Takeda K
Hitachi Ltd. Tokyo Jpn
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SUGINO Yuji
Kofu, Operation of Semiconductor and Integrated Circuits Division, Hitachi Ltd.
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SUZUKI Norio
Semiconductor and Integrated Circuits Division, Hitachi Ltd.
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KIYOTA Shogo
Semiconductor and Integrated Circuits Division, Hitachi Ltd.
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FUJITA Masato
Kofu, Operation of Semiconductor and Integrated Circuits Division, Hitachi Ltd.
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Shimizu Hirofumi
High-technology Research Center And Faculty Of Engineering Kansai University
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Shimizu Hirofumi
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Sugino Yuji
Kofu Operation Of Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Kiyota Shogo
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Shimizu H
High-technology Research Center And Faculty Of Engineering Kansai University
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Iino Akira
The Furukawa Electric Co., Ltd.
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Kuroha Toshiaki
The Furukawa Electric Co., Ltd.
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Iino Akira
The Furukawa Electric Co. Ltd.
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Kuroha Toshiaki
The Furukawa Electric Co. Ltd.
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TODORIKI Tsuyoshi
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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HAMA Yoshimasa
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Fujita M
Shizuoka Univ. Shizuoka Jpn
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Todoriki Tsuyoshi
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Shimizu Hideaki
Department Of Reaction Chemistry Faculty Of Engineering The University Of Tokyo
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Shimizu Hirofumi
Semiconductor & Integrated Circuits Division Hitachi Lid.
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Takeda Kazuo
Central Research Laboratory Hitachi Ltd.
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Takeda Kazuo
Central Research Lab. Hitachi Ltd.
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Suzuki Norio
Semiconductor And Integrated Circuits Division Hitachi Ltd.
著作論文
- Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based on P^-/P^- Thin-Film Epitaxial Silicon Wafers
- Gamma-Ray-Induced Absorption Bands in Pure-Silica-Core Fibers
- Gamma-Ray Induced Absorption Band at 770 nm in Pure Silica Core Optical Fibers
- Effect of Oxygen Content on Defect Formation in Pure-Silica Core Fibers
- Radiation Effects on Pure Silica Core Optical Fibers by γ-Rays : Relation between 2 eV Band and Non-Bridging Oxygen Hole Centers
- Improvement of Radiation Resistance of Pure Silica Core Fibers by Hydrogen Treatment
- Relation between Ge(2) Center and 11.9 mT Hyperfine Structure of ESR Spectra in Ge-Doped Silica Fibers : Magnetism, Magnetic Materials and Devices
- Gamma-Ray Induced 2 eV Optical Absorption Band in Pure-Silica Core Fibers
- The 1.52μm Absorption Band in Optical Fibers Induced by Hydrogen Treatment