Depth Profiling of Hg_<1-x>Cd_xTe by Secondary Ion Mass Spectrometry:Detecting CsX^+ with Cs^+ Ion Beam

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概要

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• Hg_<1-x>Cd_xTe (MCT) multilayers grown by photoassisted metal organic chemical vapor deposition (MOCVD) utilizing the interdiffused multilayer process (IMP) have been investigated by secondary ion mass spectrometry (SIMS). The SIMS measurement used a primary ion beam of Cs and the detected secondary ions were of the form CsX^+ (X=Cd, Te and Hg). The secondary ion intensity of CsHg^+ was higher than that of Hg^+ by about two orders of magnitude. CsX^+ detection was shown to achieve excellent linearity with the content of Hg in a series of Hg_<1-x>Cd_xTe samples (x=0, 0.2, 0.3, 0.375 and 1.0). CsX^+ detection by SIMS was proven to be a very useful technique for the evaluation of the thin multilayers in the MCT samples whose layers have 180 nm to 360 nm in thickness.

• 社団法人応用物理学会の論文
• 1994-02-15

著者

• Hayashi Shun-ichi

  Advanced Materials & Technology Research Laboratories Nippon Steel Corporation

• Hashiguchi Y

  Nippon Steel Corp. Sagamihara Jpn

• Hashiguchi Yoshihiro

  Advanced Technology Laboratories Nippon Steel Corp.:nippon-steel Techno-research Corp.

• FUJII Satoshi

  Electronics Research Laboratories, Nippon Steel Corporation

• KITAZIMA Hideo

  H.S. Technology Corporation

• Fujii Satoshi

  Electronics Research Laboratories Nippon Steel Corporation

• HASHIGUCHI Yoshihiro

  Advanced Materials & Technology Research Laboratories, Nippon Steel Corporation

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• Depth Profiling of Hg_Cd_xTe by Secondary Ion Mass Spectrometry:Detecting CsX^+ with Cs^+ Ion Beam
• Imaging of Polycyclic Aromatic Hydrocarbons by Means of Sputtered Neutrals Mass Spectrometry Using a Diode-pumped Solid-State Laser

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