Surface Properties of the AlGaN/GaN Superlattice Grown at Different Temperatures by Metalorganic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
AlGaN/GaN strained layer superlattice (SLS) structures were prepared by metalorganic vapor deposition (MOCVD) under various growth conditions. It was found that the surface morphology and V-shaped pits were determined by growth temperature. Two different types of pit were observed namely, minute pits and open V-shape pits, in scanning electronic microscopy (SEM) and atomic force microscopy (AFM) images. The density of minute pits of AlGaN/GaN SLS decreased with increasing growth temperature. It was also found that the groovelike and striplike shapes of the surface morphology of the samples prepared at 800 °C revealed a preferred orientation at about 30° angle to the flat side of the substrate, but this preferred orientation was disrupted at a higher growth temperature. The samples prepared at 850 and 900 °C exhibited a higher PL intensity with a peak wavelength of about 363 nm because of the improvement in the crystal quality of AlGaN/GaN SLS.
- 2008-12-25
著者
-
Lai Wei-chih
Institute Of Electro-optical Science And Engineering National Cheng Kung University
-
Kuo Cheng-huang
Department Of Optics And Photonics National Central University
-
Yen Wei-Yu
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
-
Sheu Jinng-Kong
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
-
Chang Shoou-Jinng
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
関連論文
- Functional Imprinting Structures on GaN-Based Light-Emitting Diodes for Light Pattern Modulation and Light Extraction Efficiency Enhancement
- MOVPE Growth of M-Plane GaN Using LiAlO_2 Substrates
- Fabrication of InGaN/GaN Multiple Quantum Wells Nanopillars by Focused Ion Beam Milling
- Optical and Electrical Properties of μ-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process
- The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads
- Focused Ion Beam Milled InGaN/GaN Multiple Quantum Well Nanopillars
- Surface Properties of the AlGaN/GaN Superlattice Grown at Different Temperatures by Metalorganic Chemical Vapor Deposition
- III–Nitride-Based Microarray Light-Emitting Diodes with Enhanced Light Extraction Efficiency
- Four-Wavelengths-Mixed White Light Emitting Diodes with Dual-Wavelength-Pumped Green and Red Phosphors
- Fabrication of High-Power InGaN-Based Light-Emitting Diode Chips on Pyramidally Patterned Sapphire Substrate
- Metalorganic Vapor Phase Epitaxy Growth of $m$-Plane GaN Using LiAlO2 Substrates
- Patterning Periodical Motif on Substrates Using Monolayer of Microspheres: Application in GaN Light-Emitting Diodes