Metalorganic Vapor Phase Epitaxy Growth of $m$-Plane GaN Using LiAlO2 Substrates

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概要

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• The crystalline, surface, and optical properties of the $m$-plane GaN layer grown on the LiAlO2 (LAO) substrate by metalorganic vapor phase epitaxy (MOVPE) were demonstrated. The low temperature growth of the GaN buffer layer, performed in the nitrogen ambient, could lead to the smooth surface morphology. Because of the small lattice mismatch between GaN and the LAO substrate, the low-density line-shaped defects, possibly originated from stacking faults, were observed. In addition, high phase purity of the $m$-plane GaN epilayer was shown in the high resolution X-ray diffraction (HRXRD) spectrum. The different behavior was found for donor-bound exciton (D0X) and defect-related transitions, characterized by the temperature-dependent photoluminescence (PL) measurement. These results suggest that the nitridation process and low temperature growth of the GaN buffer layer under nitrogen ambient could be suitable for realizing smooth and high phase purity $m$-plane GaN on LAO substrates.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Su Yan-kuin

  Advanced Optoelectronic Technology Center Institute Of Microelectronics Department Of Electrical Eng

• Lai Wei-chih

  Institute Of Electro-optical Science And Engineering National Cheng Kung University

• Chen Ying-zhi

  Advanced Optoelectronic Technology Center National Cheng Kung University

• Cheng An-ting

  Advanced Optoelectronic Technology Center National Cheng Kung University

• Lai Wei-Chih

  Institute of Electro-Optical Science and Engineering, National Cheng Kung University, No. 1. University Road, Tainan 70101, Taiwan

• Su Yan-Kuin

  Advanced Optoelectronic Technology Center, National Cheng Kung University, No. 1. University Road, Tainan 70101, Taiwan

• Chen Ying-Zhi

  Advanced Optoelectronic Technology Center, National Cheng Kung University, No. 1. University Road, Tainan 70101, Taiwan

• Cheng An-Ting

  Advanced Optoelectronic Technology Center, National Cheng Kung University, No. 1. University Road, Tainan 70101, Taiwan

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