Improvement of Light Intensity for Nitride-Based Multi-Quantum Well Light Emitting Diodes by Stepwise-Stage Electron Emitting Layer
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概要
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We demonstrate the improvement of light intensity for light emitting diodes (LEDs) using an electron emitting layer (EL) constructed by quantum wells (QWs) with stepwise depths. The results show that the stepwise-stage EL can further improve the light intensity, about 20% increment compared with that of a dual-stage LED at 20 mA. It is found that the crystal quality and electron capture rate are higher for a stepwise-stage structure. We also explore the influence of the number of QWs in the stepwise-stage EL on the light intensity. The result shows that the intensity increases with QW number but the saturation starts at about eight QWs.
- 2010-12-25
著者
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Su Yan-kuin
Advanced Optoelectronic Technology Center Institute Of Microelectronics Department Of Electrical Eng
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Hsu Hsiao-Chiu
Advanced Optoelectronic Technology Center, Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, No. 1 Dasyue Rd., East District, Tainan 701, Taiwan, R.O.C.
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Huang Shyh-Jer
Advanced Optoelectronic Technology Center, Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, No. 1 Dasyue Rd., East District, Tainan 701, Taiwan, R.O.C.
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Tseng Chi-Yao
The Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Lin Shiau-Chi
The Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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