Fabrication of High-Power InGaN-Based Light-Emitting Diode Chips on Pyramidally Patterned Sapphire Substrate

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概要

• 論文の詳細を見る

• A pyramidal pattern was produced on a $c$-plane sapphire substrate by a mask-free etching process. Photoluminescence (PL) results show that a GaN-based light-emitting diode (LED) epilayer grown on the pyramidally patterned sapphire substrate has higher epitaxial quality than that grown on a standard flat $c$-plane sapphire substrate. When the input current is 350 mA, the average light output power of LED chips on the pyramidally patterned sapphire substrate is 37% larger than that of LED chips on a standard $c$-plane sapphire substrate.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-02-25

著者

• Chen Yi-ju

  Department Of Pathology Chang Gung Memorial Hospital

• Kuo Cheng-huang

  Department Of Optics And Photonics National Central University

• Yi-Ju Chen

  Department of Chemical and Materials Engineering, National Central University, No. 300, Jhongda Rd., Jhongli, Taoyuan 32001, Taiwan, R.O.C.

• Tun Chun-Ju

  Department of Optics and Photonics, National Central University, No. 300, Jhongda Rd., Jhongli, Taoyuan 32001, Taiwan, R.O.C.

• Shih-Chieh Hsu

  Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 115, Taiwan, R.O.C.

• Yuh-Jen Cheng

  Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 115, Taiwan, R.O.C.

• Cheng-Yi Liu

  Department of Chemical and Materials Engineering, National Central University, No. 300, Jhongda Rd., Jhongli, Taoyuan 32001, Taiwan, R.O.C.

• Chun-Ju Tun

  Department of Optics and Photonics, National Central University, No. 300, Jhongda Rd., Jhongli, Taoyuan 32001, Taiwan, R.O.C.

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