Silicon Nanowires as pH Sensor

概要

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Silicon nanowires (SiNWs) have been used as a sensing layer in an extended-gate field-effect transistor (EGFET) for the measurement of solution pH. SiNWs were synthesized directly from silicon substrates via a catalytic reaction in N2 atmosphere at 955°C. The SiNWs have an average diameter of approximately 30–50 nm and a length of up to a few tens of micrometers. Here, silicon bulk materials and SiNWs were used alternately as the sensing layer in an extended-gate field-effect transistor in measuring solution pH. Experimental results showed that the pH sensitivity of silicon bulk materials is poor. However, good pH sensing properties of SiNWs, with a sensitivity of 58.3 mV/pH, was observed. Therefore, it was suggested that the pH sensitivity of silicon bulk materials was greatly improved by downsizing them to the nanoscale.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-04-15