Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
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概要
- 論文の詳細を見る
InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) with indium–tin oxide (ITO) and Ni/Au transparent conductive layers (TCLs) have been fabricated on Si substrates by laser lift-off and wafer bonding techniques. The RCLED structure consisted of an InGaN/GaN multiple-quantum-well active layer between the top (5 pairs) and bottom (7.5 pairs) dielectric TiO2/SiO2 distributed Bragg reflectors. It was found that the cavity mode of the RCLED with an ITO TCL shows a linewidth of 4 nm at the main emission peak at 494 nm. The electroluminescence intensity of the ITO-RCLED sample is 1.73 times higher in magnitude than that of the Ni/Au-RCLED one. It was found that the quality factor of the InGaN RCLED structure increased from 84 to 120 when the Ni/Au TCL was replaced by ITO. The improvements in both the optical output and the quality factor could be attributed to the higher optical transmittance of the ITO TCL enhancing the spontaneous emission at its resonant wavelength.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
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Horng Ray-hua
Institute Of Precision Egineering National Chung Hsing University
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Juang Fuh-shyang
Institute Of Electro-optical And Materials Science National Formosa University
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Huang Shih-yung
Department Of Materials Engineering National Chung Hsing University
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Lin Po-rung
Department Of Materials Engineering National Chung Hsing University
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Wang Wei-kai
Department Of Materials Engineering National Chung Hsing University
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Yu Ting-en
Department Of Materials Engineering National Chung Hsing University
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Wuu Dong-Sing
Department of Electrical Engineering, Da-Yeh University
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Wang Wei-Kai
Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, Republic of China
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Yu Ting-En
Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, Republic of China
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Lin Po-Rung
Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, Republic of China
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Juang Fuh-Shyang
Institute of Electro-Optics and Materials Engineering, National Formosa University, Huwei, Taiwan 632, Republic of China
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Juang Fuh-Shyang
Institute of Electo-optical and Materials Science, National Formosa University, 64 Wunhua Road, Huwei, Yunlin 632-08, Taiwan
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Horng Ray-Hua
Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC
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