Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques

概要

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In this paper, we report a novel low-temperature process for fabricating a Si thin-film solar cell on a glass substrate. The cell structure was composed of glass/Al/p–i–n Si/Ag (grid), where the Si intrinsic layer was deposited by hot-wire chemical vapor deposition. All the doped Si layers were produced using a postgrowth laser-doping process. The hot-wire-deposited amorphous, microcrystalline and polycrystalline Si films showed significant differences in band gap and structural properties as determined by Raman spectroscopy, spectral optical transmission measurements, and transmission electron microscopy. The corresponding crystalline volume fractions were 93, 73, and 12%, respectively. It was found that the best solar cells were fabricated with a Si intrinsic layer deposited at the transition from microcrystalline to polycrystalline regimes. A preliminary efficiency of 1.9% was obtained for an n–i–p structured solar cell on an untextured glass substrate.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-04-30