Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• HAN Pin

  Institute of Precision Engineering, National Chung Hsing University

• Lee Chia-en

  Department Of Electrical Engineering National Chung Hsing University

• HORNG Ray-Hua

  Institute of Precision Engineering, National Chung Hsing University

• WUU Dong-Sing

  Department of Materials Engineering, National Chung Hsing University

• LIN Wen-Yu

  Department of Materials Engineering, National Chung Hsing University

• WANG Woei-Kai

  Department of Materials Engineering, National Chung Hsing University

• SHIH Wen-Chung

  Institute of Electro-Optical & Material Science, National Formosa University

• FANG Jau-Shing

  Institute of Electro-Optical & Material Science, National Formosa University

• HSU Ta-Cheng

  Epistar Corporation

• HUO Tai-Chan

  Epistar Corporation

• JOU Ming-Jiunn

  Epistar Corporation

• LIN Aikey

  Wafer Works Corporation

• YU Yuan-Hsin

  Wafer Works Corporation

• Lin Wen-yu

  Department Of Materials Engineering National Chung Hsing University

• Wang Woei-kai

  Department Of Materials Engineering National Chung Hsing University

• Fang Jau-shing

  Institute Of Electro-optical & Material Science National Formosa University

• Horng Ray-hua

  Institute Of Precision Egineering National Chung Hsing University

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• Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
• Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
• Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
• Improvement in GaN-based light-emitting diodes by surface texturization with natural lithography
• GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
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