Improvements in for N-Side-Up GaN/Mirror/Si LEDs Using High Reflective Ohmic Contacts

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• HUANG Shao-Hua

  Dept. Materials Engineering, National Chung Hsing University

• WUU Dong-Sing

  Dept. Materials Engineering, National Chung Hsing University

• PAN Kuan-Fu

  Institute of Precision Engineering, National Chung Hsing University

• HORNG Ray-Hua

  Institute of Precision Engineering, National Chung Hsing University

• Pan Kuan-fu

  Institute Of Precision Engineering National Chung Hsing University

• Horng Ray-hua

  Institute Of Precision Egineering National Chung Hsing University

• Horng Ray-hua

  Institute Of Precision Engineering National Chung Hsing University

• Wuu Dong-sing

  Dept. Materials Engineering National Chung Hsing University

• Huang Shao-hua

  Dept. Materials Engineering National Chung Hsing University

• Horng Ray-Hua

  Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC

関連論文

• Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium-Tin-Oxide/Al Mirror (Special Issue: Solid State Devices & Materials)
• Improvements in for N-Side-Up GaN/Mirror/Si LEDs Using High Reflective Ohmic Contacts
• Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
• Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
• Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
• Improvement in GaN-based light-emitting diodes by surface texturization with natural lithography
• GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
• Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
• High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
• Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
• Etching Characteristics and Mechanism of Ba_Sr_TiO_3 Thin Films in an Inductively Coupled Plasma
• Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
• Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
• Characterization of Thin-Film Electroluminescent Devices with Multiple Ta_2O_5 Interlayers Incorporated into SrS:Pr,Ce Phosphor
• Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing (Special Issue: Solid State Devices & Materials)
• Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
• High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
• Wafer-Bonded AlGaInP/Au/AuBe/SiO_2/Si Light-Emitting Diodes
• Etching Characteristics of (Ba, Sr)TiO_3 Thin Films in an Inductively Coupled Plasma
• Fabrication of Si thin-film solar cells by hot-wire chemical vapor deposition and laser doping techniques
• Wafer-Bonded 859-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrate with Metal Mirror
• Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
• Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
• Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing
• Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
• High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
• Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
• Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
• Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques
• Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium–Tin-Oxide/Al Mirror
• GaN-Based Green Resonant Cavity Light-Emitting Diodes
• High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
• Characteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates
• High-Performance AlGaInP/GaAs Light-Emitting Diodes with a Carbon-Doped GaP/Indium–Tin Oxide Contact Layer
• Growth and Characterization of Epitaxial ZnO Nanowall Networks Using Metal Organic Chemical Vapor Deposition
• GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
• Rapid-Thermal-Processed BaTiO3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition

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