High-Performance AlGaInP/GaAs Light-Emitting Diodes with a Carbon-Doped GaP/Indium–Tin Oxide Contact Layer
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概要
- 論文の詳細を見る
An alternative heavily carbon-doped GaP (GaP:C) contact layer is demonstrated to form a good ohmic contact to electron-beam-evaporation indium–tin oxide (ITO) spreading layer on the AlGaInP light-emitting diode (LED) with a GaAs absorbing substrate. The LEDs with GaP:C/ITO contact layer provide a substantial improvement in light output power over conventional structures (without GaP:C/ITO). The AlGaInP LEDs with GaP:C/ITO structures exhibited a higher external quantum efficiency (3.24%) and larger light output power (5.9 mW) under a dc operation of 160 mA than those of 2.01% and 1.93 mW at 120 mA for the conventional structures, showing an earlier saturation behavior of current-power characteristics. These positive results are tentatively attributed to the introduction of the GaP:C/ITO current-spreading structures in the LEDs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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Hsu Shun-cheng
Department Of Materials Engineering National Chung Hsing University
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Horng Ray-hua
Institute Of Precision Egineering National Chung Hsing University
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Wuu Dong-Sing
Department of Electrical Engineering, Da-Yeh University
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Wuu Dong-Sing
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, Republic of China
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Horng Ray-Hua
Institute of Precision Engineering, National Chung Hsing University, Taichung 40227, Taiwan, Republic of China
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Su Juh-Yuh
Ubilux Optoelectronics Corporation, Tainan Science-Based Industrial Park, Tainan 74145, Taiwan, Republic of China
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Zheng Xinhe
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, Republic of China
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Hsu Shun-Cheng
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, Republic of China
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Horng Ray-Hua
Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC
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