Wafer-Bonded 859-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrate with Metal Mirror

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概要

• 論文の詳細を見る

• An 850-nm vertical-cavity surface-emitting laser (VCSEL) with a Au/AuBe/TaN/Ta/Si mirror substrate has been realized by low-temperature wafer bonding. It is found that the mirror substrate can be used as the bottom reflector to enhance the reflectivity of a bottom distributed Bragg reflector. The metal mirrors also served as the adhesive layers and ohmic contact layers to bond the Si substrate and the VCSEL epilayers. When the mirror-substrate-bonded VCSELs are excited by continuous-wave current at room temperature, they exhibit lower threshold current density and differential resistance (22 A/cm^2, 35 Ω) as compared with the original VCSELs on GaAs substrates (77 A/cm^2, 60Ω). This feature is attributed to the finding that the Si substrate provides a good heat sink.

• 社団法人応用物理学会の論文
• 2002-09-15

著者

• HORNG Ray-Hua

  Institute of Precision Engineering, National Chung Hsing University

• WUU Dong-Sing

  Department of Materials Engineering, National Chung Hsing University

• Horng Ray-hua

  Institute Of Precision Egineering National Chung Hsing University

• Horng Ray-hua

  Institute Of Precision Engineering National Chung Hsing University

• Wuu Doug-sing

  Department Of Materials Engineering National Chung Hsing University

• Wuu Dong-Sing

  Department of Electrical Engineering, Da-Yeh University

• Horng Ray-Hua

  Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC

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