Enhanced Luminescence and Reduced Junction Temperature in n-Type Modulation-Doped AlGaInP Multiquantum-Well Light-Emitting Diodes
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概要
- 論文の詳細を見る
AlGaInP multiquantum-well (MQW) light-emitting diodes (LEDs), with the n-type modulation-doped (MD) structure, were grown by metal-organic vapor-phase epitaxy. On investigation, these n-type MD-MQW LEDs exhibited a higher luminescence (2.53 lm) and a higher luminous efficiency (16.05 lm/W) than those of conventional LEDs (2.04 lm and 14.49 lm/W, respectively). The junction temperature of the MD-MQW LEDs also showed the benefits of this structure over conventional LEDs with a 14 °C reduction achieved at 150 mA.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-15
著者
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Liu Wen-chau
Department Of Electrical Engineering National Cheng Kung University
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Su Juh-yuh
Department Of Electrical Engineering National Tsing Hua University
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Lee Chong-yi
Department Of Electrical Engineering National Tsing Hua University:department Of Electrical Engineer
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Liu Wen-Chau
Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
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Yen Chih-Hung
Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
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Lin Hsen-Wen
Department of Electronic Engineering, I-Shou University, Ta-Hsu Hsiang, Kaohsiung County 840, Taiwan, Republic of China
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Su Juh-Yuh
Department of Research and Development, Epitech Technology Company, Tainan Science-Based Industrial Park, Tainan 74145, Taiwan, Republic of China
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