Thermal-Stable Characteristics of Metamorphic Double $\delta$-Doped Heterostructure Field-Effect Transistor
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概要
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In this study, we demonstrate the thermal-stable characteristics of a metamorphic double $\delta$-doped heterostructure field-effect transistor (MDDFET). The variations in drain current density and extrinsic transconductance of the studied device are as low as +0.3 and $-2.5$% from 300 to 420 K. When the temperature increases from 360 to 380 K, positive changes of transconductance and drain current are observed, which is different from that observed in most FETs. The thermal-stable characteristics can be attributed to the coupled wave function, inducing a larger carrier distribution in the undoped high-speed In0.6Ga0.6As region of the In0.5Ga0.5As/$\delta^{+}$/In0.5Ga0.5As/In0.6Ga0.4As/In0.5Ga0.5As/$\delta^{+}$/In0.5Ga0.5As channel when temperature increases.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-10-15
著者
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Huang Dong-hai
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Huang Jun-chin
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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LIN Yu-Shyan
Department of Electrical Engineering, National Cheng Kung University
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Lin Yu-Shyan
Department of Materials Science and Engineering, National Dong Hwa University, 1, Sec. 2, Da-Hsueh Rd., Shou-Feng, Hualien, Taiwan, Republic of China
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Huang Dong-Hai
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan, Republic of China
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