Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As Inverse Composite Channel Metamorphic High Electron Mobility Transistor

概要

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A $\delta $-doped In0.45Al0.55As/InGaAs metamorphic high-electron-mobility transistor (MHEMT) using an In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel has been fabricated successfully and demonstrated. The inverse composite channel significantly reduces Coulomb scattering and consequently improves electron mobility as well as carrier confinement. Experimentally, a high extrinsic transconductance of 321 mS/mm and a drain–source saturation current density of 342 mA/mm are obtained for a $0.65 \times 200$ μm2 gate at 300 K. Meanwhile, degradation of the studied device, in terms of parameters such as $G_{\text{m,max}}$, $I_{\text{DSS}}$, and $V_{\text{th}}$, with increasing temperature is not evident. A positive temperature coefficient of $V_{\text{th}}$ is observed. The measured $ f_{\text{T}}$ and $ f_{\text{max}}$ for a 0.65-μm-gate device are 41.6 and 53 GHz, respectively. In addition, the studied device also shows good microwave performances in a flat and wide operation region. From $V_{\text{GS}} = -2.5$ to 0.5 V, the values of $ f_{\text{T}}$ and $ f_{\text{max}}$ are still over 33 GHz.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-08-15